2SJ338

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Toshiba
2SJ338
Obsolete

Power Field-Effect Transistor, 1A I(D), 180V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Continuous Drain Current (ID) 1A
Drain to Source Voltage (Vdss) 180V
Export Control Classification Number (ECCN) Code EAR99
Introduction Date 1994-04-01
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 20W
Min Breakdown Voltage 180V
Number of Elements 1
Number of Terminals 2
RoHS Non-Compliant
Fairchild Semiconductor
Obsolete
Toshiba
EOL
Fairchild Semiconductor
Obsolete
Fairchild Semiconductor
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Fairchild Semiconductor
Obsolete
onsemi
Obsolete
onsemi
Obsolete
onsemi
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onsemi
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Infineon
Obsolete
Fairchild Semiconductor
Obsolete
onsemi
Obsolete
Fairchild Semiconductor
Obsolete
Vishay
Production
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Obsolete
onsemi
Obsolete
STMicroelectronics
Obsolete
onsemi
Obsolete
onsemi
Obsolete

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