2SK2013

2SK2013

Toshiba
2SK2013
Obsolete

Power Field-Effect Transistor, 1A I(D), 180V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Continuous Drain Current (ID) 1A
Export Control Classification Number (ECCN) Code EAR99
Harmonized Tariff Schedule (HTS) Code 8541.29.00.95
Introduction Date 1994-04-01
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 25W
Min Breakdown Voltage 180V
Number of Elements 1
Number of Terminals 3
Power Dissipation 25W
RoHS Non-Compliant

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1000 $0.22
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Fairchild Semiconductor
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