2SK858

Toshiba
2SK858
Obsolete
Power Field-Effect Transistor, 2A I(D), 600V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Continuous Drain Current (ID)	2A
Drain to Source Resistance	4Ω
Export Control Classification Number (ECCN) Code	EAR99
Harmonized Tariff Schedule (HTS) Code	8541.29.00.95
Introduction Date	1994-01-01
Lifecycle Status	Obsolete
Min Breakdown Voltage	600V
Number of Elements	1
Number of Terminals	3
Power Dissipation	40W
RoHS	Non-Compliant

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US: 1,488

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