TSZL52C11

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Taiwan Semiconductor
TSZL52C11
Production

Zener Diode, 11V V(Z), 5%, 0.2W, Silicon, Unidirectional

Breakdown Voltage 51V
Case/Package 1005
China RoHS Compliant
Clamping Voltage 70.1V
Contact Plating Gold
Element Configuration Single
Forward Voltage 1V
Impedance 20Ω
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Breakdown Voltage 53.6V
Max Forward Surge Current (Ifsm) 2.5A
Max Junction Temperature (Tj) 175°C
Max Operating Temperature 125°C
Max Power Dissipation 200mW
Max Repetitive Reverse Voltage (Vrrm) 250V
Max Reverse Leakage Current 1µA
Min Breakdown Voltage 48.5V
Min Operating Temperature -65°C
Number of Elements 1
Number of Terminals 2
Peak Pulse Current 21.4A
Peak Pulse Power 1.5kW
Polarity Unidirectional
Power Dissipation 200mW
REACH SVHC Yes
Reference Voltage 11V
Reverse Recovery Time 50ns
Reverse Standoff Voltage 43.6V
RoHS Compliant
Test Current 5mA
Voltage Tolerance 5%
Zener Current 5mA
Zener Voltage 11V