SIHFU9210-GE3

SIHFU9210-GE3

Vishay
SIHFU9210-GE3
Production

Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,...

Continuous Drain Current (ID) 1.9A
Drain to Source Resistance
Lifecycle Status Production
Max Operating Temperature 150°C
Max Power Dissipation 25W
Min Breakdown Voltage 200V
Min Operating Temperature -55°C
Number of Elements 1
Number of Terminals 3
REACH SVHC Yes
RoHS Compliant

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