Image |
Part Summary |
Avg Price |
Lifecycle Status |
Mount |
Case/Package |
Number of Pins |
Weight |
Terminal Finish |
Package Body Material |
Package Shape |
Min Operating Temperature |
Max Operating Temperature |
Access Time |
Packaging |
Min Supply Voltage |
Max Supply Voltage |
Package Quantity |
Density |
Interface |
Memory Size |
Memory Type |
Series |
Word Size |
Operating Supply Voltage |
Address Bus Width |
Number of Words |
Number of Ports |
Sync/Async |
Supply Current |
Access Time-Max |
Frequency |
Supply Voltage-Nom |
Max Frequency |
Terminal Form |
Moisture Sensitivity Level |
JESD-30 Code |
Memory Width |
Number of Functions |
Operating Mode |
Surface Mount |
Terminal Position |
Parallel/Serial |
Peak Reflow Temperature (Cel) |
Time @ Peak Reflow Temperature-Max (s) |
Technology |
Max Supply Current |
Data Bus Width |
Operating Supply Current |
Organization |
Diameter |
Length |
Height |
Width |
RoHS |
Ratings |
Radiation Hardening |
RoHS Compliant |
Lead Free |
Reach SVHC Compliant |
Temperature Grade |
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DS1245Y-70+NVSRAM, 1024KBIT, 128KX8, 32EDIP; Memory Type:SRAM; Memory Size:1Mbit; NVRAM Memory Configuration:128K x 8bit; IC Interface Type:Parallel; Access Time:70ns; Memory Case Style:DIP; No. of Pins:32Pins; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Operating Temperature Min:0°C; Operating Temperature Max:70°C; MSL:-; Base Number:1245; NVRAM Features:Internal Battery; Operating Temperature Range:0°C to +70°C; Supply Voltage Range:4.5V to 5.5V |
USD
0.19
|
Not Recommended for New Design
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Through Hole | DIP | 32 | 0°C | 70°C | 70ns | Rail/Tube | 4.5V | 5.5V | 11 | 1Mb | Parallel | 1Mb | Non-Volatile, , NVSRAM, RAM | - | 5V | 70ns | 70GHz | 8b | 85mA | 128KX8 | 44.19mm | 10.92mm | 18.8mm | Yes | No | Yes | Lead Free | Unknown | |||||||||||||||||||||||||||||
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IS62C256AL-45ULI-TREAR99 Surface Mount Tape & Reel (TR) 32KX8 ic memory 45ns 2.84mm 25mA 256kb |
USD
0.15
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Volume Production
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SOP | 28 | -40°C | 85°C | 45ns | Tape and Reel | 4.5V | 5.5V | 1000 | 256Kb | Parallel | 256Kb | Volatile, , SRAM, RAM, SRAM - Asynchronous | - | 8b | 5V | 15b | 32000 | 1 | Asynchronous | 25mA | 45ns | Yes | No | Yes | |||||||||||||||||||||||||||||||||
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CY62126EV30LL-45ZSXITSRAM Chip Async Single 3V 1M-bit 64K x 16 45ns 44-Pin TSOP-II T/R |
USD
1.2672
|
Volume Production
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Surface Mount | TSOP | 44 | -40°C | 85°C | 45ns | Tape and Reel | 2.2V | 3.6V | 1000 | 1Mb | Parallel | 1Mb | Volatile, , SRAM, SDR, RAM, SRAM - Asynchronous | MoBL® | 16b | 3V | 16b | 64000 | 1 | Asynchronous | 16mA | 45ns | 45GHz | 3.6V | Yes | No | Yes | Lead Free | INDUSTRIAL | ||||||||||||||||||||||||||||
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23LC512-I/SNMicrochip 23LC512-I/SN SRAM Memory Chip; 512kbit; 2.5 - 5.5 V 8-Pin SOIC |
USD
0.2646
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Volume Production
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SOIC | 8 | -40°C | 85°C | 25ns | Rail/Tube | 2.5V | 5.5V | 100 | 512Kb | SPI | 512Kb | RAM, , SRAM, SRAM MODULE | 23 LC512 | 8b | 16b | 64000 | 1 | Synchronous | 10mA | 20MHz | 20MHz | 4.9mm | 1.5mm | 3.9mm | Yes | Yes | |||||||||||||||||||||||||||||||
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IS61C256AL-12JLIINTEGRATED SILICON SOLUTION (ISSI) - IS61C256AL-12JLI - SRAM, 256KBIT, 12NS, SOJ-28 |
USD
0.071
|
Volume Production
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SOJ | 28 | -40°C | 85°C | 12ns | Rail/Tube | 4.5V | 5.5V | 25 | 256Kb | Parallel | 256Kb | RAM, , SRAM - Asynchronous | - | 8b | 5V | 15b | 32000 | 1 | Asynchronous | 25mA | 12ns | 83MHz | 18.54mm | 2.67mm | 7.75mm | Yes | No | Yes | Lead Free | No | |||||||||||||||||||||||||||
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CY62157EV30LL-45BVXITCY62157EV30 Series 8 Mb (512 K x 16) 2.2 - 3.6 V 45 ns Static RAM - VFBGA-48 |
USD
1.90
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Volume Production
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Surface Mount | VFBGA | 48 | -40°C | 85°C | 45ns | Tape and Reel | 2.2V | 3.6V | 2000 | 8Mb | Parallel | 8Mb | Volatile, , SRAM, SDR, RAM, SRAM - Asynchronous | MoBL® | 16b | 3V | 19b | 512000 | 1 | Asynchronous | 25mA | 45ns | 45GHz | 3.6V | Yes | No | Yes | Lead Free | INDUSTRIAL | ||||||||||||||||||||||||||||
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CY62147EV30LL-45ZSXICYPRESS SEMICONDUCTOR CY62147EV30LL-45ZSXI SRAM, 4MB, 256KX16, 3V, TSOPII-44 |
USD
0.011
|
Volume Production
|
Surface Mount | TSOP | 44 | Tin | Plastic | Rectangular | -40°C | 85°C | 45ns | Tray | 2.2V | 3.6V | 135 | 4Mb | Parallel | 4Mb | Volatile, , SRAM, SDR | MoBL® | 16b | 3V | 18b | 256000 | 1 | Asynchronous | 20mA | 45ns | 1MHz | 3.6V | 22MHz | Gull Wing | 3 | R-PDSO-G44 | 16 | 1 | ASYNCHRONOUS | Yes | DUAL | PARALLEL | 260°C | 20s | CMOS | 18.52mm | 1.04mm | 10.26mm | Yes | No | Yes | Lead Free | No | INDUSTRIAL | ||||||||
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23K256T-I/SNIC SRAM 256KBIT 20MHZ 8SOIC |
USD
1.0368
|
Volume Production
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Surface Mount | SOIC | 8 | -40°C | 85°C | 25ns | Tape and Reel | 2.7V | 3.6V | 3300 | 256Kb | SPI, Serial, 4-WIRE | 256Kb | RAM, , SRAM, Volatile, SDR | - | 8b | 3.3V | 1b | 32000 | 1 | Synchronous | 10mA | 20MHz | 3.6V | 20MHz | Yes | No | Yes | Lead Free | |||||||||||||||||||||||||||||
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CY62148ELL-55SXITSRAM, 4MBIT, PARALLEL, 55NS, SOIC-32; Memory Size:4Mbit; SRAM Memory Configuration:512K x 8bit; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Memory Case Style:SOIC; No. of Pins:32; Access Time:55ns; Packaging:Each; MSL:- ;RoHS Compliant: Yes |
USD
3.1669
|
Volume Production
|
Surface Mount | SOIC | 32 | -40°C | 85°C | 55ns | Tape and Reel | 4.5V | 5.5V | 1000 | 4Mb | Parallel | 4Mb | RAM, , SRAM - Asynchronous, Volatile, SRAM, SDR | MoBL® | 8b | 5V | 19b | 512000 | 1 | Asynchronous | 20mA | 55ns | 5V | Yes | No | Yes | Lead Free | Unknown | INDUSTRIAL | ||||||||||||||||||||||||||||
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CY7C1051DV33-10ZSXICYPRESS SEMICONDUCTOR CY7C1051DV33-10ZSXI SRAM, 8MBIT, PARALLEL, 10NS, 44TSOP |
USD
3.6018
|
Volume Production
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Surface Mount | TSOP | 44 | -40°C | 85°C | 10ns | Tray | 3V | 3.6V | 135 | 8Mb | Parallel | 8Mb | RAM, , SRAM - Asynchronous, SDR | - | 16b | 3.3V | 19b | 512000 | 1 | Asynchronous | 110mA | 10ns | 10GHz | 3.3V | 110mA | 18.52mm | 1.19mm | 11.94mm | Yes | No | Yes | Lead Free | No | INDUSTRIAL | |||||||||||||||||||||||
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