1MBI200S-120 - Fuji Electric

FUJI ELECTRIC 1MBI200S-120 IGBT Array & Module Transistor, N Channel, 300 A, 2.6 V, 1.5 kW, 1.2 kV, Module

Technical Details

Case/Package Module
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.6V
Collector Emitter Voltage (VCEO) 2.6V
Height 35mm
Isolation Voltage 2.5kV
Max Power Dissipation 1.5kW
Number of Pins 4
Power Dissipation 1.5kW
Reach SVHC Compliant Unknown
Rise Time 600ns
RoHS Compliant No
Termination Screw
Weight 0.4kg
Width 108mm

Compliance

   RoHS : Not Compliant

Images

Fuji Electric 1MBI200S-120 | Farnell

Farnell

Fuji Electric 1MBI200S-120 | Newark

Newark

Lifecycle Status Indicator

   Obsolete
 Loading indicators

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