Discrete Semiconductors > Diodes > Zener Diodes

1SMB5936 - Taiwan Semiconductor

Zener Diode, 30V V(Z), 5%, 0.55W, Silicon, Unidirectional, DO-214AA

Breakdown Voltage	51V
Case/Package	SMB
China RoHS	Non-Compliant
Clamping Voltage	70.1V
Contact Plating	Tin
Country of Origin	Mainland China, Taiwan
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Forward Voltage	1V
Harmonized Tariff Schedule (HTS) Code	8541.10.00.50
Impedance	28Ω
Introduction Date	2006-12-20
Lifecycle Status	Production
Manufacturer Lifecycle Status	ACTIVE
Max Breakdown Voltage	53.6V
Max Forward Surge Current (Ifsm)	2.5A
Max Junction Temperature (Tj)	150°C
Max Operating Temperature	150°C
Max Power Dissipation	550mW
Max Repetitive Reverse Voltage (Vrrm)	250V
Max Reverse Leakage Current	1µA
Min Breakdown Voltage	48.5V
Min Operating Temperature	-65°C
Number of Elements	1
Number of Terminals	2
Peak Pulse Current	21.4A
Peak Pulse Power	1.5kW
Polarity	Unidirectional
Power Dissipation	3W
REACH SVHC	No
Reference Voltage	30V
Reverse Recovery Time	50ns
Reverse Standoff Voltage	43.6V
RoHS	Compliant
Test Current	12.5mA
Voltage Tolerance	5%
Zener Current	12.5mA
Zener Voltage	30V

RoHS : Unconfirmed

REACH SVHC : No

Production

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator
Diodes Inc.	1SMB5936B-13	Production
Vishay	SMBZ5936B-M3/5B	Production
Vishay	SMBZ5936B-E3/52	Production
Vishay	SMBZ5936B-E3/5B	Production
onsemi	SZ1SMB5936BT3G	Production
Taiwan Semiconductor	1SMB5936 R5G	Production
Vishay	SMBZ5936B-M3/52	Production
Taiwan Semiconductor	1SMB5936 M4G	Production
Taiwan Semiconductor	1SMB5936HM4G	Production
MCC	3SMBJ5936BHE3-TP	Obsolete