Bipolar (BJT) Transistor NPN 250V 1A 800mW Through Hole TO-39 (TO-205AD)

Technical Details

Body Material Metal
Case/Package TO-39
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 450V
Collector Emitter Breakdown Voltage 250V
Collector Emitter Saturation Voltage 500mV
Collector Emitter Voltage (VCEO) 250V
Current 1A
Current Rating 1A
Diameter 9.4mm
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 7V
Frequency 15MHz
Gain Bandwidth Product 15MHz
Height 6.6mm
hFE Min 40
Harmonized Tariff Schedule (HTS) Code 8541.29.00.95
Introduction Date 1980-01-06
Lead Free Lead Free
Length 9.4mm
Lifecycle Status Obsolete
Max Collector Current 1A
Max Frequency 15MHz
Max Operating Temperature 200°C
Max Power Dissipation 5W
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity NPN
Power Dissipation 10W
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Transition Frequency 15MHz
Voltage 250V
Voltage Rating (DC) 300V
Weight 4.535924g
Width 9.4mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

STMicroelectronics 2N3440 | Farnell

Farnell

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Microchip Production
Texas Instruments Obsolete
Microchip Production
Comset Semiconductors Unknown
STMicroelectronics Obsolete
Microchip Production
Microchip Production
Microchip Production
Central Semiconductor Production
Central Semiconductor Obsolete

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