2N4912 - Central Semiconductor
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin
Technical Details
| Body Material | Metal |
| Case/Package | TO-66 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Saturation Voltage | 600mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 3MHz |
| hFE Min | 10 |
| Lifecycle Status | Obsolete |
| Max Collector Current | 1A |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 25W |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Polarity | NPN |
| Power Dissipation | 25W |
| RoHS | Non-Compliant |
| Transition Frequency | 3MHz |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Motorola | Obsolete | ||
| Central Semiconductor | Obsolete | ||
| Central Semiconductor | Obsolete | ||
| Microchip | Production | ||
| Microchip | Production | ||
| Central Semiconductor | Obsolete | ||
| Panasonic | Unknown | ||
| Central Semiconductor | Obsolete | ||
| Unitrode | Obsolete | ||
| Unitrode | Obsolete |
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