Uncategorized
2N5115 - InterFET
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18
Technical Details
| Body Material | Metal |
| Case/Package | TO-18-3 |
| Continuous Drain Current (ID) | -15mA |
| Drain to Source Resistance | 100Ω |
| Drain to Source Voltage (Vdss) | -15V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 500mW |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| REACH SVHC | Yes |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Central Semiconductor | Obsolete | ||
| Vishay | Obsolete | ||
| Solitron Devices | Production | ||
| Vishay | Obsolete | ||
| Vishay | Obsolete | ||
| Texas Instruments | Unknown | ||
| Texas Instruments | Unknown | ||
| Texas Instruments | Unknown | ||
| Motorola | Obsolete | ||
| InterFET | Unknown |
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only