Uncategorized
2N5116 - InterFET
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18
Technical Details
| Body Material | Metal |
| Drain to Source Resistance | 150Ω |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 500mW |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| REACH SVHC | Yes |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
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