STMICROELECTRONICS 2N5192 Bipolar (BJT) Single Transistor, NPN, 80 V, 40 W, 4 A, 80 hFE

Technical Details

Case/Package SOT-32
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 80V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 1.4V
Collector Emitter Voltage (VCEO) 80V
Current Rating 4A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Frequency 2MHz
Height 11.05mm
hFE Min 7
Harmonized Tariff Schedule (HTS) Code 8541.29.00.95
Introduction Date 1980-01-04
Lead Free Lead Free
Length 7.8mm
Lifecycle Status Obsolete
Max Collector Current 4A
Max Frequency 2MHz
Max Operating Temperature 150°C
Max Power Dissipation 40W
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity NPN
Power Dissipation 40W
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Transition Frequency 2MHz
Voltage Rating (DC) 80V
Weight 90.718474mg
Width 2.9mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

Lifecycle Status Indicator

   Obsolete

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