2N5684G - onsemi
Transistor, Bipolar, Si, PNP, High Current, Power, Vceo 80VDC, IC 50A, Pd 300MW, Hfe 5
Technical Details
| Body Material | Metal |
| Case/Package | TO-204-3 |
| China RoHS | Non-Compliant |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Contact Plating | Copper, Silver, Tin |
| Country of Origin | Mexico |
| Current Rating | 50mA |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 2MHz |
| Gain Bandwidth Product | 2MHz |
| Height | 26.67mm |
| hFE Min | 5 |
| Introduction Date | 1999-01-01 |
| Lead Free | Lead Free |
| Length | 38.8366mm |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Collector Current | 50A |
| Max Operating Temperature | 200°C |
| Max Power Dissipation | 300W |
| Min Operating Temperature | -65°C |
| Number of Elements | 1 |
| Number of Pins | 2 |
| Number of Terminals | 2 |
| Polarity | PNP |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| REACH SVHC | No |
| RoHS | Compliant |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Transition Frequency | 2MHz |
| Voltage Rating (DC) | -80V |
| Width | 8.509mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
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