2N6308 - Microchip

NPN TRANSISTOR Bipolar (BJT) Transistor NPN 350 V 8 A 125 W Through Hole TO-204AD (TO-3)

Technical Details

Projected EOL Date 2025-12-12
Case/Package TO-3
Collector Base Voltage (VCBO) 700V
Collector Emitter Saturation Voltage 5V
Collector Emitter Voltage (VCEO) 350V
Emitter Base Voltage (VEBO) 8V
hFE Min 12
Lifecycle Status Production
Max Collector Current 8A
Max Junction Temperature (Tj) 200°C
Max Operating Temperature 200°C
Max Power Dissipation 125W
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Packaging Bulk
Polarity NPN
Power Dissipation 125W
Radiation Hardening No
RoHS Non-Compliant

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No

Images

Lifecycle Status Indicator

   Production
Symbol
Footprint

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