2N6387G - onsemi

10 A, 80 V NPN Darlington Bipolar Power Transistor

Technical Details

Case/Package TO-220AB
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 60V
Collector Emitter Breakdown Voltage 60V
Collector Emitter Saturation Voltage 2V
Collector Emitter Voltage (VCEO) 60V
Contact Plating Tin
Country of Origin Mainland China
Current Rating 10A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Height 15.748mm
hFE Min 1000
Harmonized Tariff Schedule (HTS) Code 8541.29.00.95
Introduction Date 1999-01-01
Lead Free Lead Free
Length 10.2616mm
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Collector Current 10A
Max Operating Temperature 150°C
Max Power Dissipation 40W
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity NPN
Power Dissipation 2W
REACH SVHC No
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Transition Frequency 20MHz
Voltage Rating (DC) 60V
Weight 4.535924g
Width 4.826mm

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

Images

onsemi 2N6387G | RS

RS

Lifecycle Status Indicator

   Production

Alternatives (Possible Substitutes)

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