2SC5707-E - onsemi

Bipolar Transistor, 50V, 8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Technical Details

Case/Package TO-251
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 110mV
Collector Emitter Voltage (VCEO) 50V
Country of Origin Mainland China
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 6V
Frequency 330MHz
Gain Bandwidth Product 330MHz
hFE Min 200
Introduction Date 2011-03-18
Lead Free Lead Free
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Breakdown Voltage 50V
Max Collector Current 8A
Max Operating Temperature 150°C
Max Power Dissipation 1W
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Bulk
Polarity NPN
Power Dissipation 1W
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Schedule B 8541290080
Transition Frequency 330MHz

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

onsemi 2SC5707-E | Farnell

Farnell

Lifecycle Status Indicator

   Obsolete
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Alternatives (Possible Substitutes)

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