2SD1802T-E - onsemi
Bipolar Transistor, 50V, 3A, Low VCE(sat) NPN Single TP/TP-FA hFE = 200-400
Technical Details
| Case/Package | TO-251-3 |
| China RoHS | Non-Compliant |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Contact Plating | Tin Bismuth |
| Country of Origin | Mainland China |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 100 |
| Introduction Date | 2012-04-25 |
| Lead Free | Lead Free |
| Lifecycle Status | Production |
| Manufacturer Lifecycle Status | ACTIVE |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 1W |
| Min Operating Temperature | -55°C |
| Number of Pins | 3 |
| Packaging | Bulk |
| Polarity | NPN |
| REACH SVHC | No |
| RoHS | Compliant |
| Transition Frequency | 150MHz |
Compliance
RoHS : Unconfirmed
REACH SVHC : No
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Rochester Electronics
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