2SJ401 - Toshiba
Power Field-Effect Transistor, 20A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
Technical Details
| Continuous Drain Current (ID) | 20A |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 100W |
| Number of Elements | 1 |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
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