2SK211 - Toshiba
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET
Technical Details
| Export Control Classification Number (ECCN) Code | EAR99 |
| Introduction Date | 1983-03-01 |
| Lifecycle Status | EOL |
| Max Operating Temperature | 125°C |
| Max Power Dissipation | 200mW |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| onsemi | Production | ||
| Calogic | Production | ||
| onsemi | Production | ||
| Central Semiconductor | Unknown | ||
| Central Semiconductor | Production | ||
| onsemi | Production | ||
| onsemi | EOL | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| Vishay | Obsolete |
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