2SK2176 - ROHM
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
Technical Details
| Continuous Drain Current (ID) | 5A |
| Drain to Source Resistance | 1.4Ω |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 1994-10-01 |
| Lifecycle Status | Obsolete |
| Max Power Dissipation | 30W |
| Min Breakdown Voltage | 500V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 30W |
| RoHS | Compliant |
Compliance
RoHS : Unconfirmed
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