2SK2190 - Shindengen
Power Field-Effect Transistor, 10A I(D), 500V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Technical Details
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 1Ω |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 1994-01-01 |
| Lifecycle Status | Obsolete |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 40W |
| Min Breakdown Voltage | 500V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Power Dissipation | 40W |
| RoHS | Non-Compliant |
Compliance
RoHS : Unconfirmed
Images
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