Power Field-Effect Transistor, 28A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

Technical Details

Continuous Drain Current (ID) 28A
Drain to Source Resistance 25mΩ
Max Operating Temperature 150°C
Min Breakdown Voltage 30V
Number of Elements 1
Number of Terminals 2
REACH SVHC Yes

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

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Lifecycle Status Indicator

   Unknown

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