AP9452GG - Advanced Power Electronics
Power Field-Effect Transistor, 4A I(D), 20V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Technical Details
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 50mΩ |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Introduction Date | 2004-11-26 |
| Max Operating Temperature | 150°C |
| Min Breakdown Voltage | 20V |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| REACH SVHC | Yes |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
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