Discrete Semiconductors  >  Transistors

Advanced Power Electronics - AP9565GEM

Power Field-Effect Transistor, 40V, 0.038ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

 Datasheets

Technical Details

Drain to Source Resistance 38mΩ
Max Operating Temperature 150°C
Min Breakdown Voltage 40V
Number of Elements 1
Number of Terminals 8
REACH SVHC Yes

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

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Lifecycle Status Indicator

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56106-AP9565GEM
CN: 3120
 $ 0.1454 0.1182
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