AP9936GM - Advanced Power Electronics
Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Technical Details
| Continuous Drain Current (ID) | 5A |
| Drain to Source Resistance | 50mΩ |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Introduction Date | 2009-01-20 |
| Max Operating Temperature | 150°C |
| Min Breakdown Voltage | 30V |
| Number of Elements | 2 |
| Number of Terminals | 8 |
| REACH SVHC | Yes |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
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