AUIRFR5505 - Infineon

Automotive Q101 -55V Single P-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

Technical Details

Case/Package DPAK
China RoHS Non-Compliant
Contact Plating Tin
Continuous Drain Current (ID) 18A
Drain to Source Breakdown Voltage -55V
Drain to Source Resistance 110mΩ
Drain to Source Voltage (Vdss) -55V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Fall Time 16ns
Gate to Source Voltage (Vgs) 20V
Height 2.39mm
Input Capacitance 650pF
Introduction Date 2010-12-06
Length 6.73mm
Lifecycle Status Obsolete
Max Junction Temperature (Tj) 150°C
Max Operating Temperature 150°C
Max Power Dissipation 57W
Min Breakdown Voltage 55V
Min Operating Temperature -55°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 2
On-State Resistance 110mΩ
Package Quantity 3000
Power Dissipation 57W
Radiation Hardening No
Rds On Max 110mΩ
REACH SVHC Yes
Rise Time 28ns
RoHS Compliant
Threshold Voltage -2V
Turn-Off Delay Time 20ns
Turn-On Delay Time 12ns
Width 6.22mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

Lifecycle Status Indicator

   Obsolete
Symbol
Footprint

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