AUIRFZ34N - Infineon
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Technical Details
| Case/Package | TO-220AB |
| China RoHS | Compliant |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 40mΩ |
| Drain to Source Voltage (Vdss) | 55V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.13mm |
| Input Capacitance | 700pF |
| Introduction Date | 2011-01-12 |
| Length | 10.75mm |
| Lifecycle Status | Obsolete |
| Max Junction Temperature (Tj) | 175°C |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 68W |
| Min Breakdown Voltage | 55V |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| On-State Resistance | 40mΩ |
| Package Quantity | 1000 |
| Power Dissipation | 68W |
| Radiation Hardening | No |
| Rds On Max | 40mΩ |
| REACH SVHC | Yes |
| Rise Time | 49ns |
| RoHS | Compliant |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 7ns |
| Width | 4.83mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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Rochester Electronics
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