BC546BZL1G - onsemi

Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 2mA 5V 15nA 625mW 300MHz

Technical Details

Case/Package TO-92-3
China RoHS Compliant
Collector Base Voltage (VCBO) 80V
Collector Emitter Breakdown Voltage 65V
Collector Emitter Saturation Voltage 600mV
Collector Emitter Voltage (VCEO) 65V
Contact Plating Copper, Silver, Tin
Current Rating 100mA
Element Configuration Single
Emitter Base Voltage (VEBO) 6V
Frequency 300MHz
Gain Bandwidth Product 300MHz
Height 5.33mm
hFE Min 200
Lead Free Lead Free
Length 5.2mm
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Breakdown Voltage 65V
Max Collector Current 100mA
Max Frequency 300MHz
Max Operating Temperature 150°C
Max Power Dissipation 1.5W
Min Operating Temperature -55°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity NPN
Power Dissipation 625mW
Radiation Hardening No
REACH SVHC Yes
RoHS Compliant
Transition Frequency 300MHz
Voltage Rating (DC) 65V
Width 4.19mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

onsemi BC546BZL1G | element14 APAC

element14 APAC

Lifecycle Status Indicator

   Obsolete
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Alternatives (Possible Substitutes)

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