BC847T,115 - NXP Semiconductors

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon

Technical Details

Case/Package SC
Collector Base Voltage (VCBO) 50V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Voltage (VCEO) 45V
Contact Plating Tin
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 6V
Frequency 100MHz
Gain Bandwidth Product 100MHz
hFE Min 110
Introduction Date 1999-04-23
Lead Free Lead Free
Lifecycle Status Obsolete
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Operating Temperature 150°C
Max Power Dissipation 150mW
Min Operating Temperature -65°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Digi-Reel®
Polarity NPN
Power Dissipation 150mW
Radiation Hardening No
REACH SVHC Yes
RoHS Compliant
Schedule B 8541210080
Transition Frequency 100MHz

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Fairchild Semiconductor Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Unknown
Fairchild Semiconductor Obsolete
onsemi Obsolete
MCC Production
onsemi Obsolete
STMicroelectronics Obsolete
onsemi Obsolete

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