BC858BW-7-F - Diodes Inc.

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon

Technical Details

Case/Package SOT-323
China RoHS Compliant
Collector Base Voltage (VCBO) 30V
Collector Emitter Breakdown Voltage 30V
Collector Emitter Voltage (VCEO) 30V
Contact Plating Tin
Country of Origin Mainland China
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Frequency 200MHz
Gain Bandwidth Product 200MHz
Height 1mm
hFE Min 220
Introduction Date 2002-10-07
Length 2.2mm
Lifecycle Status Production
Max Collector Current 100mA
Max Operating Temperature 150°C
Max Power Dissipation 200mW
Min Operating Temperature -55°C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Tape & Reel
Polarity PNP
Power Dissipation 200mW
REACH SVHC Yes
RoHS Compliant
Transition Frequency 200MHz
Weight 6.010099mg
Width 1.35mm

Compliance

   RoHS : Unconfirmed
   REACH SVHC : Yes

Images

Diodes Inc. BC858BW-7-F | TME

TME

Lifecycle Status Indicator

   Production

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