BCX5616QTA - Diodes Inc.

Bipolar (BJT) Single Transistor, NPN, 80 V, 1 A, 2 W, SOT-89, Surface Mount

Technical Details

Case/Package SOT-89
China RoHS Compliant
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 500mV
Collector Emitter Voltage (VCEO) 80V
Country of Origin Mainland China
Export Control Classification Number (ECCN) Code EAR99
Emitter Base Voltage (VEBO) 6V
Frequency 150MHz
Height 1.6mm
hFE Min 100
Introduction Date 2012-01-19
Lifecycle Status Production
Max Breakdown Voltage 80V
Max Collector Current 1A
Max Junction Temperature (Tj) 150°C
Max Operating Temperature 150°C
Max Power Dissipation 2W
Min Operating Temperature -65°C
Mount Surface Mount
Number of Elements 1
Number of Pins 4
Number of Terminals 3
Polarity NPN
Power Dissipation 1W
Radiation Hardening No
REACH SVHC Yes
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Transition Frequency 150MHz

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

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Diodes Inc. BCX5616QTA | TME

TME

Lifecycle Status Indicator

   Production
Symbol
Footprint

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