BD137 - NXP Semiconductors
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Technical Details
| Case/Package | TO-225-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Current Rating | 1.5A |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 25 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.75 |
| Introduction Date | 1975-01-23 |
| Lead Free | Contains Lead |
| Lifecycle Status | Obsolete |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 8W |
| Min Operating Temperature | -55°C |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Polarity | NPN |
| Power Dissipation | 8W |
| RoHS | Non-Compliant |
| Transition Frequency | 190MHz |
| Voltage Rating (DC) | 60V |
Compliance
RoHS : Unconfirmed
Images
Notice
We're sorry. Your current subscription doesn't support online BOM analysis. Please sign up for a free SmartParts Analysis trial and check it out.
Registered user only