BD14010S - onsemi
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 63 @ 150mA 2V 100nA ICBO 1.25W -80V
Technical Details
| Case/Package | TO-126 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Current Rating | -1.5A |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 63 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 2000-12-20 |
| Lead Free | Lead Free |
| Lifecycle Status | Obsolete |
| Manufacturer Lifecycle Status | OBSOLETE |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 12.5W |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1.25W |
| REACH SVHC | Yes |
| RoHS | Compliant |
| Voltage Rating (DC) | -80V |
| Weight | 761mg |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
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