Discrete Semiconductors > Transistors > BJTs

BD237G - onsemi

2.0 A, 80 V, 25W NPN Bipolar Power Transistor

Technical Details

Case/Package	TO-225
China RoHS	Compliant
Collector Base Voltage (VCBO)	100V
Collector Emitter Breakdown Voltage	80V
Collector Emitter Saturation Voltage	600mV
Collector Emitter Voltage (VCEO)	80V
Current Rating	2A
Element Configuration	Single
Emitter Base Voltage (VEBO)	5V
Frequency	3MHz
Gain Bandwidth Product	3MHz
hFE Min	25
Lead Free	Lead Free
Lifecycle Status	Production
Manufacturer Lifecycle Status	ACTIVE
Max Collector Current	2A
Max Frequency	3MHz
Max Operating Temperature	150°C
Max Power Dissipation	25W
Min Operating Temperature	-55°C
Number of Elements	1
Number of Pins	3
Number of Terminals	3
Packaging	Bulk
Polarity	NPN
Power Dissipation	25W
Radiation Hardening	No
REACH SVHC	No
RoHS	Compliant
Schedule B	8541290080
Transition Frequency	3MHz
Voltage Rating (DC)	80V

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Images

onsemi BD237G | Farnell

Farnell

Datasheets

Lifecycle Status Indicator

Production

Symbol

BD237G Symbol - onsemi

BD237G Symbol - onsemi

BD237G Symbol - onsemi

BD237G Symbol - onsemi

‹ ›

Footprint

BD237G Footprint - onsemi

BD237G Footprint - onsemi

BD237G Footprint - onsemi

BD237G Footprint - onsemi

‹ ›

Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
onsemi	BD237	Obsolete
onsemi	BD237STU	Obsolete
MCC	BD237-BP	Obsolete
Toshiba	2SC5351	Obsolete
Shindengen	2SC4052	Obsolete
Shindengen	2SC4056	Obsolete
ROHM	2SD2096	Production
Shindengen	2SC4234	Obsolete
ROHM	2SD2037	Production
Shindengen	2SC4231	Obsolete

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RS

DE: 25

$

0.931

0.6958

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DE: 240

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EU: 0

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0.3763

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0.285

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CN: 90400

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HK: 42087

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