Discrete Semiconductors > Transistors > BJTs

BD441G - onsemi

NPN 80 V 4 A 3 MHz 36 W Through Hole Bipolar (BJT) Transistor - TO-126

Technical Details

Case/Package	TO-225
China RoHS	Compliant
Collector Base Voltage (VCBO)	80V
Collector Emitter Breakdown Voltage	80V
Collector Emitter Saturation Voltage	800mV
Collector Emitter Voltage (VCEO)	80V
Country of Origin	Mainland China
Current Rating	4A
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Emitter Base Voltage (VEBO)	5V
Frequency	3MHz
Gain Bandwidth Product	3MHz
hFE Min	15
Introduction Date	1991-06-01
Lead Free	Lead Free
Lifecycle Status	Production
Manufacturer Lifecycle Status	ACTIVE
Max Collector Current	4A
Max Operating Temperature	150°C
Max Power Dissipation	36W
Min Operating Temperature	-55°C
Number of Elements	1
Number of Pins	3
Number of Terminals	3
Packaging	Bulk
Polarity	NPN
Power Dissipation	36W
Radiation Hardening	No
REACH SVHC	No
RoHS	Compliant
Schedule B	8541290080
Transition Frequency	3MHz
Voltage Rating (DC)	80V

Compliance

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : No

Images

onsemi BD441G | Newark

Newark

Datasheets

Lifecycle Status Indicator

Production

Symbol

BD441G Symbol - onsemi

BD441G Symbol - onsemi

BD441G Symbol - onsemi

BD441G Symbol - onsemi

‹ ›

Footprint

BD441G Footprint - onsemi

BD441G Footprint - onsemi

BD441G Footprint - onsemi

BD441G Footprint - onsemi

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Alternatives (Possible Substitutes)

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator	Confidence
onsemi	BD441	Obsolete
onsemi	BD441STU	Obsolete
Multicomp	BD441	Production
CDIL	BD441	Unknown
STMicroelectronics	BD441	Obsolete
onsemi	TIP49	Obsolete
onsemi	TIP48G	Production
STMicroelectronics	BD436	Obsolete
Central Semiconductor	2N5956	Production
STMicroelectronics	TIP49	Obsolete

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