BDV64B - onsemi

Tube Through Hole PNP - Darlington Single Bipolar (BJT) Transistor 1000 @ 5A 4V 1mA 125W 0.1MHz

Technical Details

Case/Package TO-247-3
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 100V
Collector Emitter Voltage (VCEO) 100V
Country of Origin Mainland China
Current Rating -10A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Introduction Date 1991-06-01
Lead Free Contains Lead
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Collector Current 10A
Max Operating Temperature 150°C
Max Power Dissipation 125W
Min Operating Temperature -65°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity PNP
REACH SVHC No
RoHS Compliant
Transition Frequency 100kHz
Voltage Rating (DC) -100V

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

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onsemi BDV64B | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   Obsolete
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