BDX54BG - onsemi

8.0 A, 80 V, 65 W PNP Darlington Bipolar Power Transistor

Technical Details

Case/Package TO-220-3
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 80V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 2V
Collector Emitter Voltage (VCEO) 80V
Contact Plating Tin
Country of Origin Mainland China
Current Rating -8A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Height 15.75mm
hFE Min 750
Introduction Date 1995-07-01
Lead Free Lead Free
Length 10.53mm
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Breakdown Voltage 80V
Max Collector Current 8A
Max Operating Temperature 150°C
Max Power Dissipation 60W
Min Operating Temperature -65°C
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity PNP
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Transition Frequency 4MHz
Voltage Rating (DC) -80V
Weight 6.000006g
Width 4.83mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

onsemi BDX54BG | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   Obsolete
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