BF510,215 - NXP Semiconductors

BF510 Series 10 V 30 mA 100 MHz N-Channel Silicon Field-Effect Transistor - SOT-23-3

Technical Details

Case/Package TO-236-3
China RoHS Compliant
Contact Plating Tin
Continuous Drain Current (ID) 30mA
Country of Origin Mainland China
Current Rating 30mA
Drain to Source Voltage (Vdss) 20V
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Frequency 100MHz
Gate to Source Voltage (Vgs) 20V
Height 1mm
Harmonized Tariff Schedule (HTS) Code 8541.21.00
Introduction Date 1993-07-01
Length 3mm
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 250mW
Min Breakdown Voltage 20V
Min Operating Temperature -65°C
Mount Surface Mount
Noise Figure 1.5dB
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Packaging Digi-Reel®
Radiation Hardening No
REACH SVHC Yes
RoHS Compliant
Schedule B 8541210080
Test Current 5mA
Test Voltage 10V
Voltage Rating 20V
Weight 200.998119mg
Width 1.4mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
NXP Semiconductors Obsolete
NXP Semiconductors Obsolete
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NXP Semiconductors Obsolete
Vishay Obsolete
NXP Semiconductors Obsolete
Calogic Production
NXP Semiconductors Obsolete
NXP Semiconductors Obsolete
NXP Semiconductors Obsolete

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