BFR181E6327HTSA1 - Infineon
BFR181 Series 20 V 20 mA Low Noise Silicon Bipolar RF Transistor - SOT-23-3
Technical Details
| Case/Package | SOT |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Contact Plating | Tin, Matte |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 2V |
| Frequency | 8GHz |
| Gain | 18.5dB |
| Halogen Free | Not Halogen Free |
| Height | 900um |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 20mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 175mW |
| Mount | Surface Mount |
| Noise Figure | 0.9dB |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 175mW |
| Power Gain | 18.5dB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 8GHz |
| Voltage Rating (DC) | 12V |
| Width | 1.3mm |
Compliance
RoHS : Compliant
Radiation Hardening : No
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Rochester Electronics
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