Discrete Semiconductors > Transistors > BJTs

BFR520T,115 - NXP Semiconductors

RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, L Band, Silicon, NPN

Case/Package	SC
China RoHS	Compliant
Collector Base Voltage (VCBO)	20V
Collector Emitter Breakdown Voltage	15V
Collector Emitter Voltage (VCEO)	15V
Contact Plating	Tin
Continuous Collector Current	70mA
Export Control Classification Number (ECCN) Code	EAR99
Element Configuration	Single
Emitter Base Voltage (VEBO)	2.5V
Frequency	9GHz
Gain	15dB
Gain Bandwidth Product	9GHz
Height	850µm
hFE Min	60
Harmonized Tariff Schedule (HTS) Code	8541.21.00.75
Introduction Date	1999-11-02
Lead Free	Lead Free
Length	1.8mm
Lifecycle Status	Obsolete
Max Breakdown Voltage	15V
Max Collector Current	70mA
Max Frequency	9GHz
Max Operating Temperature	150°C
Max Power Dissipation	300mW
Min Operating Temperature	-65°C
Mount	Surface Mount
Number of Elements	1
Number of Pins	3
Number of Terminals	3
Packaging	Digi-Reel®
Polarity	NPN
Power Dissipation	150mW
Radiation Hardening	No
REACH SVHC	Yes
RoHS	Compliant
Transition Frequency	9GHz
Width	900µm

RoHS : Unconfirmed

Radiation Hardening : No

REACH SVHC : Yes

Obsolete

Manufacturer	Manufacturer Part No.	Lifecycle Status Indicator
NXP Semiconductors	BFR520,215	Obsolete
NXP Semiconductors	BFR520	Obsolete
NXP Semiconductors	BFR520T	Obsolete
NXP Semiconductors	BFT25A,215	Obsolete
NXP Semiconductors	BFT25,215	Obsolete
Central Semiconductor	CMPT5179 TR	Production
Infineon	BFS 17P E6433	Obsolete
NXP Semiconductors	BFT25A	Obsolete
NXP Semiconductors	BFR92	Obsolete
NXP Semiconductors	BFR505	Obsolete