BSP52T3G - onsemi

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA

Technical Details

Case/Package SOT-223-4
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 90V
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 1.3V
Collector Emitter Voltage (VCEO) 80V
Country of Origin Malaysia
Current Rating 1A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Halogen Free Halogen Free
Height 1.57mm
hFE Min 2000
Introduction Date 1999-01-01
Lead Free Lead Free
Length 6.5mm
Lifecycle Status Production
Manufacturer Lifecycle Status ACTIVE
Max Breakdown Voltage 80V
Max Collector Current 1A
Max Operating Temperature 150°C
Max Power Dissipation 1.25W
Min Operating Temperature -65°C
Number of Elements 1
Number of Pins 4
Number of Terminals 4
Packaging Tape and Reel
Polarity NPN
Power Dissipation 1.25W
Radiation Hardening No
REACH SVHC No
RoHS Compliant
Schedule B 8541210080
Voltage Rating (DC) 80V
Width 3.5mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

onsemi BSP52T3G | Farnell

Farnell

Lifecycle Status Indicator

   Production
Symbol
Footprint

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