BSS84-7-F - Diodes Inc.
Transistor: P-MOSFET; unipolar; -50V; -130mA; 10ohm; 300mW; -55+150 deg.C; SMD; SOT23
Technical Details
| Case/Package | SOT-23-3 |
| China RoHS | Compliant |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 130mA |
| Country of Origin | Mainland China, Taiwan |
| Current Rating | -130mA |
| Drain to Source Breakdown Voltage | -50V |
| Drain to Source Resistance | 10Ω |
| Drain to Source Voltage (Vdss) | -50V |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 45pF |
| Introduction Date | 2003-04-18 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Lifecycle Status | Production |
| Max Junction Temperature (Tj) | 150°C |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 300mW |
| Manufacturer Package Identifier | BSS84-7-F |
| Min Breakdown Voltage | 50V |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Cut Tape |
| Power Dissipation | 300mW |
| Rds On Max | 10Ω |
| REACH SVHC | Yes |
| Resistance | 10Ω |
| RoHS | Compliant |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Threshold Voltage | -800mV |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 10ns |
| Voltage Rating (DC) | -50V |
| Weight | 7.994566mg |
| Width | 1.3mm |
Compliance
RoHS : Unconfirmed
REACH SVHC : Yes
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