BSS8402DW-7 - Diodes Inc.

Transistor - FET Dual N-Channel 60 / -50V 200mW

Technical Details

Case/Package SOT-363
Continuous Drain Current (ID) 115mA
Current Rating 115mA
Drain to Source Breakdown Voltage -50V
Drain to Source Resistance 7.5Ω
Drain to Source Voltage (Vdss) 50V
Export Control Classification Number (ECCN) Code EAR99
Gate to Source Voltage (Vgs) 20V
Height 1mm
Input Capacitance 50pF
Introduction Date 2003-04-16
Lead Free Contains Lead
Length 2.2mm
Lifecycle Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 200mW
Min Breakdown Voltage 60V
Min Operating Temperature -55°C
Mount Surface Mount
Number of Channels 2
Number of Elements 2
Number of Pins 6
Number of Terminals 6
Packaging Cut Tape
Power Dissipation 200mW
Rds On Max 7.5Ω
REACH SVHC No
RoHS Non-Compliant
Turn-Off Delay Time 18ns
Turn-On Delay Time 10ns
Weight 6.010099mg
Width 1.35mm

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

Images

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Diodes Inc. Production
Diodes Inc. Production
Diodes Inc. Production
Diodes Inc. Production
Panjit NRND
Panjit Unknown
Panjit NRND
Panjit NRND

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