Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

Technical Details

Body Material Metal
Case/Package TO-3
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 1.5kV
Collector Emitter Breakdown Voltage 700V
Collector Emitter Saturation Voltage 1V
Collector Emitter Voltage (VCEO) 700V
Current Rating 8A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 10V
Frequency 7MHz
Gain Bandwidth Product 7MHz
Height 8.7mm
hFE Min 2.3
Harmonized Tariff Schedule (HTS) Code 8541.29.00.95
Introduction Date 1980-01-04
Lead Free Lead Free
Length 39.5mm
Lifecycle Status Obsolete
Max Collector Current 8A
Max Frequency 7MHz
Max Operating Temperature 175°C
Max Power Dissipation 13W
Min Operating Temperature -65°C
Mount Chassis Mount, Through Hole
Number of Elements 1
Number of Terminals 2
Packaging Bulk
Polarity NPN
Power Dissipation 150W
Radiation Hardening No
REACH SVHC Yes
RoHS Non-Compliant
Termination Through Hole
Transition Frequency 7MHz
Voltage Rating (DC) 700V
Width 26.2mm

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : Yes

Images

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
Toshiba Obsolete
Sanken Obsolete
Sanken Obsolete
Sanken Obsolete
Sanken Obsolete
Sanken Obsolete
Sanken Obsolete
Sanken Obsolete
Sanken Obsolete
Sanken Obsolete

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