BU508AF - NXP Semiconductors
Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Technical Details
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 700V |
| Contact Plating | Tin |
| Export Control Classification Number (ECCN) Code | EAR99 |
| hFE Min | 6 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 1987-07-15 |
| Lead Free | Lead Free |
| Lifecycle Status | Obsolete |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 34W |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Polarity | NPN |
| Power Dissipation | 34W |
| RoHS | Compliant |
| Transition Frequency | 7MHz |
Compliance
RoHS : Unconfirmed
Images
Alternatives (Possible Substitutes)
| Manufacturer | Manufacturer Part No. | Lifecycle Status Indicator | Confidence |
|---|---|---|---|
| Fairchild Semiconductor | Obsolete | ||
| STMicroelectronics | Obsolete | ||
| Sanyo | Obsolete | ||
| STMicroelectronics | Production | ||
| onsemi | Obsolete | ||
| onsemi | Obsolete | ||
| onsemi | Production | ||
| onsemi | Production | ||
| onsemi | Obsolete | ||
| onsemi | Production |
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