STMICROELECTRONICS BUL59 Bipolar (BJT) Single Transistor, NPN, 450 V, 90 W, 5 A, 8 hFE

Technical Details

Case/Package TO-220
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 850V
Collector Emitter Breakdown Voltage 400V
Collector Emitter Saturation Voltage 1.5V
Collector Emitter Voltage (VCEO) 400V
Contact Plating Tin
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 9V
hFE Min 4
Harmonized Tariff Schedule (HTS) Code 8541.29.00.95
Introduction Date 1980-01-04
Lifecycle Status Obsolete
Max Collector Current 8A
Max Operating Temperature 150°C
Max Power Dissipation 90W
Min Operating Temperature -65°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity NPN
Power Dissipation 90W
Radiation Hardening No
REACH SVHC No
RoHS Compliant

Compliance

   RoHS : Unconfirmed
   Radiation Hardening : No
   REACH SVHC : No

Images

STMicroelectronics BUL59 | element14 APAC

element14 APAC

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
STMicroelectronics Obsolete
Fairchild Semiconductor Obsolete
Taiwan Semiconductor Obsolete
MCC Obsolete
onsemi Obsolete
onsemi Obsolete
onsemi Obsolete
Panasonic Obsolete
onsemi Obsolete
onsemi Obsolete

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