BUTW92 - STMicroelectronics
Bipolar (BJT) Single Transistor, NPN, 250 V, 180 W, 60 A, 9 hFE
Technical Details
| Case/Package | TO-247 |
| China RoHS | Non-Compliant |
| Collector Base Voltage (VCBO) | 500V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 250V |
| Contact Plating | Tin |
| Country of Origin | Mainland China |
| Current Rating | 15A |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 7V |
| Height | 20.3mm |
| hFE Min | 9 |
| Harmonized Tariff Schedule (HTS) Code | 8541.29.00.95 |
| Introduction Date | 1980-01-04 |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Lifecycle Status | Production |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 180W |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Polarity | NPN |
| Power Dissipation | 180W |
| Radiation Hardening | No |
| REACH SVHC | No |
| RoHS | Compliant |
| Schedule B | 8541290080 |
| Voltage Rating (DC) | 250V |
| Width | 5.3mm |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : No
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