BYM10-800-E3/97 - Vishay
Rectifier Diode, 1 Phase, 1 Element, 1A, 800V V(RRM), Silicon, DO-213AB
Technical Details
| Average Rectified Current | 1A |
| Body Material | Glass |
| China RoHS | Non-Compliant |
| Contact Plating | Tin |
| Export Control Classification Number (ECCN) Code | EAR99 |
| Element Configuration | Single |
| Forward Current | 1A |
| Forward Voltage | 1.2V |
| Harmonized Tariff Schedule (HTS) Code | 8541.10.00.80 |
| Introduction Date | 2006-07-24 |
| Lifecycle Status | Production |
| Max Forward Surge Current (Ifsm) | 30A |
| Max Operating Temperature | 175°C |
| Max Output Current | 1A |
| Max Repetitive Reverse Voltage (Vrrm) | 800V |
| Max Reverse Voltage (DC) | 800V |
| Max Surge Current | 30A |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Number of Pins | 2 |
| Number of Terminals | 2 |
| Peak Non-Repetitive Surge Current | 30A |
| Peak Reverse Current | 10µA |
| Radiation Hardening | No |
| REACH SVHC | Yes |
| Reverse Standoff Voltage | 800V |
| Reverse Voltage | 800V |
| RoHS | Compliant |
| Schedule B | 8541100080, 8541100080|8541100080|8541100080|8541100080|8541100080 |
Compliance
RoHS : Unconfirmed
Radiation Hardening : No
REACH SVHC : Yes
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