D45C12G - onsemi

Tube Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 200mA 1V 100nA 30W 40MHz

Technical Details

Case/Package TO-220AB
China RoHS Non-Compliant
Collector Base Voltage (VCBO) 80V
Collector Emitter Saturation Voltage 135mV
Collector Emitter Voltage (VCEO) 80V
Country of Origin Mainland China
Current Rating -4A
Export Control Classification Number (ECCN) Code EAR99
Element Configuration Single
Emitter Base Voltage (VEBO) 5V
Frequency 40MHz
Gain Bandwidth Product 40MHz
Height 6.35mm
hFE Min 20
Introduction Date 2003-06-11
Lead Free Lead Free
Length 31.75mm
Lifecycle Status Obsolete
Manufacturer Lifecycle Status OBSOLETE
Max Collector Current 4A
Max Operating Temperature 150°C
Max Power Dissipation 30W
Min Operating Temperature -55°C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Number of Terminals 3
Polarity PNP
Power Dissipation 30W
REACH SVHC No
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Transition Frequency 40MHz
Voltage Rating (DC) -80V
Weight 4.535924g
Width 12.7mm

Compliance

   RoHS : Unconfirmed
   REACH SVHC : No

Images

onsemi D45C12G | Rochester Electronics

Rochester Electronics

Lifecycle Status Indicator

   Obsolete

Alternatives (Possible Substitutes)

Manufacturer Manufacturer Part No. Lifecycle Status Indicator Confidence
onsemi Obsolete
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Solid State Manufacturing Obsolete
STMicroelectronics Production
onsemi Production
onsemi Production
STMicroelectronics Production
onsemi Production
STMicroelectronics Obsolete
STMicroelectronics Production

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